| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,986 pcs
|
3986 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current Rating | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present |
The Toshiba TPC8A01 is an N-Channel MOSFET designed for various electronic applications. It comes in a compact SOIC package, making it suitable for surface mount assembly.
Key electrical specifications include a breakdown voltage of 30V and a continuous current rating of 8.5A. The maximum power dissipation is rated at 750mW, with a typical power dissipation of 1.5W. Its drain-source on-resistance (RDS(on)) is a maximum of 25mΩ, and the drain-source resistance is typically 30mΩ.
This MOSFET operates within a temperature range of -55°C to 150°C. It also features an input capacitance of 940pF, a rise time of 17ns, and a fall time of 92ns. The component is manufactured by Toshiba and is designed for reliable performance in demanding environments.
The breakdown voltage is 30V.
The maximum RDS(on) is 25mΩ.
The maximum continuous drain current is 8.5A.
The operating temperature range is -55°C to 150°C.
It is available in an SOIC package.
The input capacitance is 940pF.
Rise time is 17ns and fall time is 92ns.