TPC8207(TE12L)
N-A
The Toshiba TPC8207 is an N-Channel MOSFET designed for lithium-ion battery applications. It offers a low drain-source ON resistance and a small footprint.
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24,000 pcs
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24000 pcs | On Request | 1 | On Request | On Request | 04/05+ | On Request | On Request |
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The TPC8207(TE12L) is a Silicon N-Channel MOS Type (U-MOSIII) Field Effect Transistor manufactured by NA. It is designed for applications such as Lithium Ion Batteries, Notebook PCs, and Portable Equipment.
Key electrical characteristics include a drain-source voltage (Vds) of 20V, a continuous drain current (Id) of 6A, and a pulse drain current (Idp) of 24A. The transistor features a low drain-source ON resistance (RDS(on)) of 16 mΩ (typical) and a high forward transfer admittance (|Yfs|) of 11 S (typical). The leakage current (Idss) is a maximum of 10 µA at Vds = 20V. The enhancement-mode threshold voltage (Vth) ranges from 0.5V to 1.2V.
Thermal specifications include a channel temperature (Tch) maximum of 150°C and a storage temperature range (Tstg) from -55°C to 150°C. The device is housed in a compact 2-6J1E package, weighing approximately 0.08g.
This MOSFET is suitable for designs requiring efficient power management in compact electronic devices.
The maximum drain-source voltage is 20 V.
The typical drain-source ON resistance is 16 mΩ.
The typical forward transfer admittance is 11 S.
The maximum leakage current is 10 µA at VDS = 20 V.
The channel temperature can range up to 150 °C.
The storage temperature range is -55 to 150 °C.
The device is supplied in the 2-6J1E package.