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2,782 pcs
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2782 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The Toshiba TPC8207 is a silicon N-Channel MOS Type Field Effect Transistor utilizing U-MOSIII technology. It is designed for applications such as lithium-ion batteries, notebook PCs, and portable equipment.
Key electrical characteristics include a drain-source voltage (Vds) of 20V, a continuous drain current (Id) of 6A, and a pulse drain current (Idp) of 24A. The device exhibits a low drain-source ON resistance (Rds(on)) of 16 mΩ (typ.) and a high forward transfer admittance (|Yfs|) of 11 S (typ.). The leakage current (Idss) is a maximum of 10 µA at 20V.
With a small footprint due to its small and thin package, the TPC8207 is suitable for space-constrained designs. The enhancement-mode transistor has a threshold voltage (Vth) ranging from 0.5V to 1.2V. Thermal characteristics include a channel temperature limit of 150°C and various thermal resistance values depending on the mounting and operation conditions.
This electrostatic sensitive device requires careful handling. Its applications span portable electronics and power management systems where efficient switching and low resistance are critical.
20V
2-6J1E
150°C, with storage temperature range of -55 to 150°C
16mΩ
0.5 to 1.2V
46.8mJ
6A