HZM11NB1TR-E
Hitachi
The Renesas HZM11NB1TR-E is a Zener Diode designed for voltage regulation. It features a nominal Zener voltage of 10.66V and a power rating of 200mW.
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200,889 pcs
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200889 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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12,500 pcs
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12500 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
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195 pcs
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195 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | 2026-06-03 08:15:22 |
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The Toshiba TPC8061-H is a Silicon N-Channel MOSFET designed for various electronic applications. This component features a breakdown voltage of 30V and can handle a continuous drain current of up to 13A.
Key electrical characteristics include a low Drain-Source On-Resistance (RDS(ON)) of 8mΩ at 10V and 11mΩ at 4.5V, making it efficient for power switching. The maximum operating temperature is rated at 150°C, ensuring reliability in demanding environments.
This MOSFET is manufactured by Toshiba and comes with 8 terminals. Its specifications make it suitable for use in power management circuits and other semiconductor applications requiring robust performance.
| Qty | Low | High |
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| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the TPC8061-H MOSFET is 30V.
The TPC8061-H can handle a continuous drain current of 13A.
The maximum operating temperature for the TPC8061-H is 150°C.
The Drain-Source On-Resistance (RDS(ON)) at 10V for the TPC8061-H is 8mΩ.
The Drain-Source On-Resistance (RDS(ON)) at 4.5V for the TPC8061-H is 11mΩ.
The TPC8061-H has 8 terminals.
