TPC8026 The Toshiba TPC8026 is an N-Channel MOSFET designed for applications like lithium-ion batteries and portable equipment. It offers a low drain-source ON resistance of 5.1 mΩ (typ.).
Mfr Part #:

TPC8026

Available from 3 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8026 is an N-Channel MOSFET designed for applications like lithium-ion batteries and portable equipment. It offers a low drain-source ON resistance of 5.1 mΩ (typ.).
✓ Total Stock: 333,830 pcs
$ Price Range: $2.81

TPC8026 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
301,000 pcs
301000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
29,830 pcs
29830 pcs On Request 1 On Request On Request 1036+ On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 07+ On Request On Request

TPC8026 Specifications Quick View

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TPC8026 Description

Short technical summary and product information.

The Toshiba TPC8026 is a Silicon N-Channel MOS Type Field Effect Transistor, part of the U-MOS IV series. It is designed for applications such as lithium-ion batteries, portable equipment, and notebook PCs.

 

Key electrical characteristics include a maximum Drain-Source Voltage (VDSS) of 30V and a low drain-source ON resistance (Rds(on)) of 5.1 mΩ (typ.). It also features a high forward transfer admittance (|Yfs|) of 30 S (typ.) and a low leakage current (IDSS) of 10 μA (max) at 30V.

 

The device operates with an enhancement mode and has a threshold voltage (Vth) ranging from 1.3V to 2.5V at 10V drain-source voltage and 1mA drain current. The absolute maximum ratings include a continuous drain current (ID) of 13A and a pulse drain current (IDP) of 52A.

 

Thermal characteristics include a maximum channel temperature (Tch) of 150°C and thermal resistance values for channel to ambient. The TPC8026 comes in a small and thin package, contributing to a small footprint. It is an electrostatic-sensitive device and should be handled with caution.

TPC8026 Quick Information

Product Type: MOSFET
Series: TPC
Canonical Name: TPC8026 N-Channel MOSFET
Subcategory: N-Channel

TPC8026 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8026 Estimated Pricing

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1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPC8026 Features

  • N-Channel Silicon MOS Type Field Effect Transistor.
  • Low drain-source ON resistance: 5.1 mΩ (typ.).
  • High forward transfer admittance: 30 S (typ.).
  • Low leakage current: 10 μA (max).
  • Small footprint due to small and thin package.

TPC8026 Applications

  • Ideal for lithium ion battery applications.
  • Suitable for portable equipment.
  • Used in notebook PC applications.

TPC8026 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the TPC8026?

The maximum drain-source voltage (VDSS) for the TPC8026 is 30 V.

What is the typical drain-source ON resistance of the TPC8026?

The typical drain-source ON resistance (Rds(on)) for the TPC8026 is 5.1 mΩ.

What is the typical forward transfer admittance of the TPC8026?

The typical forward transfer admittance (|Yfs|) of the TPC8026 is 30 S.

What is the maximum leakage current for the TPC8026?

The maximum leakage current (IDSS) for the TPC8026 is 10 μA at 30 V.

What is the threshold voltage range for the TPC8026?

The threshold voltage (Vth) for the TPC8026 ranges from 1.3 to 2.5 V under specific test conditions (VDS = 10 V, ID = 1 mA).

What is the maximum channel temperature for the TPC8026?

The maximum channel temperature (Tch) for the TPC8026 is 150 °C.

What is the package type for the TPC8026?

The TPC8026 is supplied in the 2-6J1B package.

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