TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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35,044 pcs
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35044 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The Toshiba TPC8010-H. is a high-speed N-Channel Silicon MOSFET belonging to the U-MOSIII series. It is designed for applications such as DC-DC converters, notebook PCs, and portable electronic devices.
Key electrical characteristics include a maximum drain-source voltage of 30V and a continuous drain current of 13A. The MOSFET features a low drain-source ON resistance, with a typical value of 8mΩ at 10V VGS and 11mΩ at 4.5V VGS. It also exhibits a typical gate charge of 18 nC and a high forward transfer admittance of 11 S (typ.).
Its small and thin package contributes to a small footprint, making it suitable for space-constrained designs. The high-speed switching capability is beneficial for efficient power conversion circuits.
30V.
13A.
8mΩ at VGS=10V, 11mΩ at VGS=4.5V.
18nC.
8-SOIC surface-mount package.
U-MOSIII.
11S typical.