SUP85N10-10L-GE3
VBsemi
The VBsemi SUP85N10-10L-GE3 is a MOSFET transistor designed for power applications. It features a 100V drain-source voltage and a 100A continuous drain current.
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38,523 pcs
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38523 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The VBsemi TK70D06J1 is a power MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 120A, making it suitable for high-power switching and amplification tasks.
This MOSFET is housed in a TO220 package, a common through-hole form factor that facilitates heat dissipation and ease of mounting on printed circuit boards. The typical gate threshold voltage is 3V, with a nominal gate-source voltage rating of ±20V.
VBsemi offers this component, and it is listed alongside similar types such as VBM1606, VBM1607V1.6, and VBM1607V3, suggesting potential interchangeability or alternative options within their product line. Further technical details, such as specific Rds On values, gate charge, and operating temperature ranges, would typically be found in the manufacturer's datasheet.
The drain-source voltage (VDS) is 60V.
The continuous drain current (ID) is 120A.
The TK70D06J1 is in a TO220 package.
The typical gate threshold voltage is 3V.
The maximum gate-source voltage is ±20V.