| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,035 pcs
|
2035 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Package / Case | |
| Technology |
The VBsemi SUP85N10-10L-GE3 is a single MOSFET transistor housed in a TO220 package. It offers a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 100A. The gate-source voltage (VGS) is rated at 20V, with a typical gate threshold voltage (Vth) of 2.5V. This MOSFET is suitable for various power management and industrial automation applications.
Designed for efficiency and reliability, the SUP85N10-10L-GE3 is a robust component for power switching and control circuits. Its TO220 package facilitates easy mounting and thermal management in typical electronic assemblies. The device's specifications make it a versatile choice for engineers designing power supplies, motor controllers, and other power electronic systems.
The drain-source voltage is 100V.
The continuous drain current is 100A.
The MOSFET is supplied in a TO220 package.
The typical gate threshold voltage is 2.5V.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.