TK25A60X,S5X(M
Toshiba
The Toshiba TK25A60X,S5X(M is an N-channel MOSFET designed for switching regulator applications. It features a 600V drain-source voltage and a 25A drain current.
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11,000 pcs
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11000 pcs | On Request | 1 | On Request | On Request | 17+PBF | On Request | On Request |
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The Toshiba TK5P65W is a Silicon N-Channel MOSFET utilizing the DTMOS Super Junction Structure. It is designed for applications such as switching voltage regulators.
Key electrical characteristics include a Drain-Source Voltage (VDSS) of 650V, a continuous Drain Current (ID) of 5.2A, and a pulsed Drain Current (IDP) of 20.8A. The device features a low drain-source on-resistance (RDS(ON)) of 1.02 Ω (typ.) and a Gate Threshold Voltage (Vth) ranging from 2.5V to 3.5V.
With a Power Dissipation (PD) of 60W at 25°C (Tc), a maximum Channel Temperature (Tch) of 150°C, and a Storage Temperature (Tstg) range of -55 to 150°C, this MOSFET is suitable for demanding thermal conditions. The channel-to-case thermal resistance is rated at 2.09 °C/W.
The TK5P65W comes in a DPAK package, with pins designated as Gate, Drain (Heatsink), and Source. It is easy to control gate switching and is an enhancement mode device.
650V
5.2A DC
1.02Ω typical
DPAK
2.5V to 3.5V
60W
Storage -55°C to 150°C, channel up to 150°C