| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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957,000 pcs
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957000 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The Toshiba TK25A60X,S5X(M is an N-channel MOSFET belonging to the DTMOS IV-H generation. It is designed for use in switching regulator applications.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 600V and a maximum drain current (Id) of 25A. The device has a maximum gate threshold voltage (Vth) of 3.5V and a maximum drain-source on-resistance (Rds(on)) of 125mΩ at a gate-source voltage of 10V. Typical input capacitance (Ciss) is 2400pF, and typical gate charge (Qg) is 40nC at VGS=10V.
The MOSFET is housed in a TO-220SIS package, suitable for through-hole mounting. The packaging method is tube, with a standard package quantity of 5 units.
This component is RoHS3 compliant and has an MSL rating of 1, indicating unlimited shelf life under standard conditions.
The maximum drain-source voltage (Vds) for the TK25A60X,S5X(M is 600V.
The TK25A60X,S5X(M MOSFET has a maximum drain current (Id) of 25A.
The maximum on-resistance (Rds(on)) of the TK25A60X,S5X(M is 125mΩ when measured at VGS=10V.
The TK25A60X,S5X(M MOSFET is supplied in a TO-220SIS package.
The TK25A60X,S5X(M is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TK25A60X,S5X(M is Level 1.