TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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8,660 pcs
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8660 pcs | On Request | 1 | On Request | On Request | 1410 | On Request | On Request |
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The Toshiba TK4Q60DA,Q is an N-Channel Power MOSFET suitable for switching regulator applications. This enhancement-mode transistor offers a drain-source voltage rating of 600V and a continuous drain current of 3.5A. It has a pulsed drain current capability of 14A and a low on-resistance of 1.7Ω.
The device is designed for through-hole mounting and comes in a TO package. With a maximum power dissipation of 80W, it is engineered for reliable performance in demanding applications. The gate-source voltage is rated at ±30V, with a gate leakage current of ±1µA.
This MOSFET is an enhancement-type device, making it easy to handle in circuit designs. Its specifications make it a suitable component for various power electronics applications where high voltage and moderate current handling are required.
The drain-source voltage rating for the TK4Q60DA,Q is 600V.
The continuous drain current of the TK4Q60DA,Q is 3.5A.
The on-resistance of the TK4Q60DA,Q is 1.7Ω.
The maximum power dissipation for the TK4Q60DA,Q is 80W.
The TK4Q60DA,Q is in a TO package.
The TK4Q60DA,Q is mounted using the through-hole method.