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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | 1645+PB | On Request | On Request |
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The Toshiba TK20A20D is a power field-effect transistor featuring an N-Channel, Silicon, Metal-oxide Semiconductor construction. It is designed for applications such as switching voltage regulators.
Key electrical characteristics include a low drain-source on-resistance (RDS(ON)) of 0.07 Ohms typical at 10A, and a maximum drain current (ID) of 20A. The device has a maximum drain-source voltage (VDS) of 200V. The gate threshold voltage (Vth) ranges from 1.5V to 3.5V under specific test conditions.
This MOSFET is housed in a TO-220SIS package. It exhibits low leakage current, with IDSS at a maximum of 10A when VDS is 200V. The enhancement mode operation is suitable for various power switching applications.
Designed for reliability, the TK20A20D is suitable for circuits requiring efficient power control and regulation. Its specifications make it a component choice for power supply designs and other demanding electronic systems.
The typical drain-source on-resistance (RDS(ON)) for the TK20A20D is 0.07 Ohms when VGS is 10V and ID is 10A.
The maximum drain current (ID) for the TK20A20D is 20A.
The maximum drain-source voltage (VDS) for the TK20A20D is 200V.
The gate threshold voltage (Vth) for the TK20A20D ranges from 1.5V to 3.5V.
The TK20A20D MOSFET is supplied in a TO-220SIS package.