| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
189 pcs
|
189 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation | |
| Storage Temperature | |
| Tape & Reel |
The Toshiba TK15H50C is a Silicon N-Channel MOSFET manufactured by Toshiba. This component is designed for special purpose applications within the discrete semiconductor product category.
Key electrical specifications include a breakdown voltage of 500V, a drain-source resistance of 400mΩ, and a power dissipation rating of 150W. It also has a fast rise time of 15ns and a fall time of 10ns, indicating efficient switching characteristics.
This MOSFET is suitable for various electronic designs requiring robust performance and high voltage handling capabilities. Its specifications suggest utility in power switching, amplification, or control circuits where specific performance parameters are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the TK15H50C is 500V.
The drain-source resistance is 400mΩ.
The power dissipation is 150W.
The rise time is 15ns and the fall time is 10ns.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.