| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDX66B is a bipolar Darlington transistor manufactured by NXP Semiconductors. This component is designed for applications requiring high current handling capabilities, with a maximum collector current of 16A and a collector-emitter voltage of 100V. It also features a maximum power dissipation of 150W and an operating temperature range up to 200°C.
This transistor is suitable for various power switching and amplification tasks. Its robust specifications make it a viable option for industrial and general-purpose electronic circuits where reliability and performance are key.
The BDX66B has 2 terminals and is specified with a collector-emitter saturation voltage of 2V. The product is described as RoHS3 Compliant, with an MSL rating of 1 and REACH Unaffected status, though these compliance details are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the BDX66B is 16A.
The collector-emitter voltage rating for the BDX66B is 100V.
The maximum power dissipation for the BDX66B is 150W.
The maximum operating temperature for the BDX66B is 200°C.
The BDX66B is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BDX66B is 1.