| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| SVHC Present |
The Toshiba TK14V65W is an N-Channel MOSFET with a breakdown voltage of 650V. It offers a continuous drain current of 13.7A and a low drain-source on-resistance ranging from 250 to 280 milliohms. This MOSFET is designed for surface mounting, making it suitable for various power electronic circuits.
Key electrical characteristics include a gate source voltage range of -30V to 30V and a gate source threshold voltage between 2.5V and 3.5V. These specifications allow for flexible control and integration into different designs. The TK14V65W is a component from Toshiba's power transistor line, intended for applications requiring efficient power switching and management.
The Drain Source Breakdown Voltage is 650 V.
The Continous Drain Current is 13.7 A.
The Drain Source Resistance is between 250 to 280 milliohm.
The Gate Source Voltage is -30 to 30 V.
The Gate Source Threshold Voltage is 2.5 to 3.5 V.
The TK14V65W uses a Surface Mount package.
