| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,800 pcs
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3800 pcs | On Request | 1 | On Request | On Request | 18+PBF | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The Toshiba TJ150F06M3L is a P-Channel Silicon MOSFET from the U-MOS series, suitable for automotive, relay driver, and motor driver applications. It offers a low drain-source on-resistance of 4.3 mΩ at a gate-source voltage of -10V and a low leakage current of -10 µA maximum at -60V drain-source voltage.
This MOSFET has an enhancement mode with a threshold voltage ranging from -2.0V to -3.0V. The absolute maximum drain-source voltage is -60V, and the continuous drain current is -150A. The device is packaged in a TO-220SM(W) package and is AEC-Q101 qualified.
Key electrical characteristics include a maximum power dissipation of 300W at 25°C case temperature and a channel-to-case thermal resistance of 0.5 C/W. The operating and storage temperatures range from -55°C to 175°C.
The maximum drain-source voltage is -60 V.
The typical drain-source on-resistance is 4.3 mΩ when VGS is -10 V.
The maximum leakage current is -10 µA when VDS is -60 V.
This MOSFET is supplied in a TO-220SM(W) package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
The REACH status is REACH Unaffected.