| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
210 pcs
|
210 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The NXP Semiconductors PSMN1R7-60BS is a standard level N-channel MOSFET designed for high efficiency in industrial, communications, and domestic equipment. It features a drain-source voltage of 60V and a continuous drain current of up to 120A at 25°C.
This MOSFET offers low switching and conduction losses, making it suitable for standard level gate drive sources. Key electrical characteristics include a drain-source on-state resistance (RDSon) of 2.66 mOhm at 25A and 25°C junction temperature, and a total gate charge of 137 nC.
The device is housed in a D2PAK package, suitable for surface mounting. It is qualified to operate at temperatures up to 175°C junction temperature, with storage temperatures ranging from -55°C to 175°C.
Applications for the PSMN1R7-60BS include DC-to-DC converters, load switching, motor control, and server power supplies. Its robust design and high efficiency make it a reliable choice for demanding power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current is 120A at 25°C.
The typical drain-source on-state resistance is 2.66 mOhm at 25A and 25°C.
The maximum junction temperature is 175°C.
The PSMN1R7-60BS is supplied in a D2PAK package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.