BAT46WJ-QX
NXP Semiconductors
The NXP Semiconductors BAT46WJ-QX is a Schottky diode with a 100V reverse voltage rating and 250mA average rectified current. It is packaged in a SOD-323F surface mount case.
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59 pcs
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59 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The TIP51 is a High-Voltage NPN Silicon Power Transistor from TEXET, designed for robust performance in demanding applications. It offers a maximum collector current of 3A and a significant power dissipation capability of 100W, making it suitable for power handling tasks.
With a maximum operating temperature of 150°C, the TIP51 ensures reliability under elevated thermal conditions. Its NPN silicon construction provides efficient switching and amplification characteristics.
This transistor is categorized under Transistors - Bipolar (BJT) - Single, Pre-Biased, indicating its role in switching and amplification circuits where specific biasing conditions are required. Its specifications suggest suitability for power supply regulation, audio amplifiers, and general-purpose switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the TIP51 is 3A.
The maximum power dissipation of the TIP51 is 100W.
The maximum operating temperature for the TIP51 is 150°C.
The TIP51 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TIP51 is 1 Unlimited.
The TIP51 is REACH Unaffected.
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