| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,000 pcs
|
24000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type |
The Infineon Technologies BCW66KGE6327HTSA1 is a surface-mount NPN bipolar transistor designed for various electronic applications. It offers a collector-emitter breakdown voltage of 45V and can handle a maximum collector current of 800mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 160 at 100mA and 1V, a transition frequency of 170MHz, and a Vce saturation of 450mV maximum at 50mA/500mA. The device operates at temperatures up to 150°C (TJ).
This transistor is housed in a compact TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting. The supplier device package is PG-SOT23, and it is supplied in Tape & Reel (TR).
Environmental compliance includes RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status. Exact specifications should always be obtained from the product datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 45V.
The maximum collector current is 800mA.
The minimum DC current gain (hFE) is 160 at 100mA and 1V.
The transition frequency is 170MHz.
The operating temperature is up to 150°C.
This transistor is in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting.