BAT5406WH6327XTSA1
Infineon
The Infineon BAT5406WH6327XTSA1 is a silicon Schottky diode designed for low-loss, fast-recovery applications. It features a 30V reverse voltage rating and 200mA forward current.
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP42C is a complementary PNP power transistor manufactured by NXP Semiconductors, suitable for a variety of electronic applications including general purpose circuits, audio amplifiers, and power linear and switching systems. This device is housed in a TO-220 plastic package, facilitating its integration into circuit designs.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 100V and a maximum collector current (IC) of 6A. The transistor can handle a peak collector current (ICM) of 10A for short durations (tP < 5ms) and a base current (IB) of up to 3A. Its total power dissipation (PTOT) is rated at 65W at a case temperature of 25°C. The maximum operating junction temperature (TJ) is 150°C, with storage temperatures ranging from -65°C to 150°C.
Additional electrical specifications include a collector cut-off current (ICEO) of 0.7mA at 60V, and an emitter cut-off current (IEBO) of 1mA at 5V. The collector-emitter sustaining voltage (VCEO(sus)) is 100V. Saturation voltage (VCE(sat)) is a maximum of 1.5V when the collector current is 6A and base current is 0.6A. The typical base-emitter voltage (VBE(on)) is 2V under specific test conditions.
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| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the TIP42C is 100V.
The continuous collector current (IC) rating for the TIP42C is 6A.
The total power dissipation (PTOT) for the TIP42C at a case temperature of 25°C is 65W.
The TIP42C transistor is available in a TO-220 package.
The maximum operating junction temperature (TJ) for the TIP42C is 150°C.