| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Operating Temperature | |
| Transistor Type |
The TIP34C is a PNP bipolar junction transistor (BJT) manufactured by Central Semiconductor Corp. This component is designed for general-purpose applications requiring a robust transistor.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 10A. The device can dissipate up to 80W of power. Its DC current gain (hFE) is a minimum of 100 at a collector current of 3A and a collector-emitter voltage of 4V. The transition frequency is 3MHz.
This transistor is housed in a TO-218-3 package and is designed for through-hole mounting. The operating temperature range is from -65°C to 150°C.
Environmental compliance indicates RoHS non-compliance. The Moisture Sensitivity Level (MSL) is 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the TIP34C is 80V.
The maximum continuous collector current for the TIP34C is 10A.
The maximum power dissipation for the TIP34C transistor is 80W.
The TIP34C operates within a temperature range of -65°C to 150°C.
The minimum DC current gain (hFE) for the TIP34C is 100 at Ic=3A and Vce=4V.
The TIP34C transistor is mounted using the through-hole method.
The TIP34C is RoHS non-compliant.
