| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,800 pcs
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1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJF3055 is a high-voltage, high-current PNP bipolar junction transistor designed for power switching and linear amplification applications. It features a collector-emitter breakdown voltage of 150V and a maximum collector current of 8A, making it suitable for demanding applications.
This transistor is built using silicon epitaxial planar technology and housed in a TO-220FP package, which facilitates through-hole mounting and provides electrical isolation. Key electrical characteristics include a low Vce(sat) of 500mV at 100mA/1A and a minimum DC current gain (hFE) of 20 at 4A/2V. It operates within a temperature range of -65°C to 150°C (Junction).
The MJF3055 is well-suited for use in power amplification stages, switching power supplies, audio and signal amplifier circuits, and industrial equipment. Its robust design and specifications make it a reliable choice for motor control, UPS, and high voltage switching applications where dependable performance is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the MJF3055 is 150V.
The maximum collector current for the MJF3055 is 8A.
The Vce saturation voltage for the MJF3055 at 100mA/1A is a maximum of 500mV.
The minimum DC current gain (hFE) of the MJF3055 at 4A/2V is 20.
The operating temperature range for the MJF3055 is -65°C to 150°C (Junction).
The MJF3055 is a PNP bipolar junction transistor.
The MJF3055 is supplied in a TO-220FP package.