| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP33C is a silicon Epitaxial-Base NPN power transistor manufactured by Texas Instruments, housed in a TO-218 plastic package. It is engineered for use in both linear and switching applications, offering a robust solution for power electronics designs.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 100V and a continuous collector current (Ic) of 10A. The transistor exhibits a DC current gain (hFE) ranging from 20 to 100 at Ic=10A, and a transition frequency (FT) of at least 3MHz. It also has a maximum emitter-base voltage (Veb) of 5V.
With a power dissipation rating of 80W, the TIP33C is suitable for applications requiring significant power handling. It also includes ESD protection ratings of over 400V for Machine Model and over 8000V for Human Body Model.
The complementary PNP type for the TIP33C is the TIP34C. This transistor is intended for general-purpose power amplification and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the TIP33C is 100V.
The TIP33C has a continuous collector current rating of 10A.
The TIP33C transistor is supplied in a TO-218 package.
The TIP33C is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TIP33C is 1.
