| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Transistor Type |
The TIP29C is a medium power NPN bipolar junction transistor (BJT) manufactured by Texas Instruments. It is suitable for both linear and switching applications, offering a collector-emitter breakdown voltage of up to 100V and a maximum collector current of 1A.
Key electrical characteristics include a maximum power dissipation of 2W and a DC current gain (hFE) of at least 15 at 1A and 4V. The transistor has a Vce saturation of 700mV at 125mA/1A and a collector cutoff current of 300µA.
Designed for through-hole mounting, the TIP29C comes in a TO-220-3 package. Its operating temperature range extends up to 150°C (TJ), making it suitable for various electronic designs requiring reliable power transistor performance.
This component is classified under discrete semiconductor products, specifically within the Transistors - Bipolar (BJT) - Single, Pre-Biased category. Its robust specifications make it a versatile choice for engineers designing power control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the TIP29C is 100V.
The maximum collector current (Ic) for the TIP29C is 1A.
The maximum power dissipation for the TIP29C is 2W.
The operating temperature range (TJ) for the TIP29C is up to 150°C.
The TIP29C transistor is designed for through-hole mounting.
The TIP29C is supplied in a TO-220-3 package.