| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The TIP136 is a PNP silicon power transistor in a monolithic Darlington configuration, housed in a TO-220 plastic package. It is designed for use in power linear and switching applications. This transistor offers a high DC current gain (hFE) and a low collector-emitter saturation voltage (VCE(sat)).
Key electrical characteristics include a collector-emitter sustaining voltage (VCEO(sus)) of up to 100V and a continuous collector current (IC) of 8A. The maximum power dissipation (PD) is rated at 70W at 25°C case temperature. The device operates within a junction temperature range of -65°C to +150°C.
The TIP136 is suitable for general-purpose amplification and low-speed switching applications. Its complementary NPN types are TIP131 and TIP132. The TO-220 package is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the TIP136 is 100V.
The TIP136 can handle a continuous collector current of 8A.
The maximum power dissipation for the TIP136 at a case temperature of 25°C is 70W.
The TIP136 transistor can be operated and stored within a temperature range of -65°C to +150°C.
The TIP136 is supplied in a TO-220 package.
The DC current gain (hFE) of the TIP136 at IC=4.0A and VCE=4.0V is a minimum of 1000.
