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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD137 is a silicon epitaxial planar NPN transistor housed in a SOT-32 plastic package. It is specifically designed for use in audio amplifiers and driver circuits, particularly those employing complementary or quasi-complementary configurations.
Key electrical characteristics include a maximum collector current (Ic) of 1.5A and a maximum collector-emitter voltage (Vce) of 60V. The device also offers a typical DC current gain (hFE) of 150 at 1.5A and a transition frequency (FT) of 150MHz under similar test conditions. The maximum power dissipation is rated at 8W.
This transistor is well-suited for applications requiring moderate power handling and amplification. Its design makes it a reliable component for general-purpose amplification tasks within its specified limits. The SOT-32 package is a standard surface-mount or through-hole component, depending on the specific variant, facilitating integration into various electronic designs.
Equivalent or alternate parts include BD115, BD130, BD131, BD132, BD135, and BD138, offering designers flexibility in component selection.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the BD137 is 1.5A.
The maximum collector-emitter voltage (Vce) for the BD137 is 60V.
The typical DC current gain (hFE) of the BD137 is 150 at 1.5A collector current and 2V collector-emitter voltage.
The BD137 transistor is supplied in a SOT-32 plastic package.
The BD137 is designed for audio amplifiers and driver circuits, including complementary or quasi-complementary configurations.