| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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29 pcs
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29 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP130 is a silicon epitaxial-base NPN power transistor featuring a monolithic Darlington configuration. It is housed in a standard Jedec TO-220 plastic package, making it suitable for through-hole mounting.
This transistor is intended for use in power linear and switching applications. Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 60V, a maximum Collector Current (IC) of 8A, and a maximum Collector Peak Current (ICM) of 12A. The DC Current Gain (hFE) ranges from 500 to 15000 at IC=4A, VCE=4V. It also features a maximum Collector-Emitter Saturation Voltage (VCE(sat)) of 2V at IC=4A, IB=16mA.
The TIP130 has a maximum power dissipation of 70W at Tcase=25°C and 2W at Tamb=25°C. The operating junction temperature is rated up to 150°C, with storage temperatures ranging from -65°C to 150°C. Thermal resistance from junction to case is a maximum of 1.78°C/W, and junction to ambient is 63.5°C/W.
Complementary PNP types are available as TIP135, TIP136, and TIP137. The device is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the TIP130 is 60V.
The continuous Collector Current (IC) rating for the TIP130 is 8A.
The TIP130 transistor is supplied in a TO-220 package.
The maximum operating junction temperature for the TIP130 is 150°C.
The TIP130 is RoHS3 Compliant.
