| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Package / Case |
The TIP107G from Infineon is a medium-power, complementary silicon NPN transistor in a Darlington configuration. It is designed for general-purpose amplifier and low-speed switching applications.
Key electrical characteristics include a collector-emitter sustaining voltage (VCEO(sus)) of up to 100 Vdc for the TIP107 variant, a continuous collector current (IC) of 8.0 Adc, and a peak collector current of 15 Adc. It boasts a high DC current gain (hFE) of 2500 (Typ) at IC = 4.0 Adc. The device also features a low collector-emitter saturation voltage (VCE(sat)) of 2.0 Vdc (Max) at IC = 3.0 Adc and 2.5 Vdc (Max) at IC = 8.0 Adc.
This transistor is constructed monolithically with built-in base-emitter shunt resistors. It is available in a TO-220AB package, suitable for through-hole mounting. The operating and storage junction temperature range is from -65 to +150 °C.
The TIP107G is Pb-free and RoHS compliant, making it suitable for various electronic designs requiring reliable power amplification or switching.
The collector-emitter sustaining voltage (VCEO(sus)) is 100V minimum for the TIP107G.
The TO-220AB through-hole package.
–65 to +150°C.
The typical DC current gain (hFE) is 2500 at IC = 4A.
The continuous collector current is 8A, with a peak current of 15A.
80W at case temperature 25°C, derate 0.64 W/°C above 25°C.