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27,060 pcs
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27060 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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7,450 pcs
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7450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BT137-600E from NXP Semiconductors is a planar passivated, sensitive gate, four-quadrant triac. It comes in a TO-220AB package and is intended for general-purpose bidirectional switching and phase control applications. This triac is designed for direct interfacing with microcontrollers and other low-power gate trigger circuits.
Key electrical specifications include a repetitive peak off-state voltage (VDRM) of 600V, an RMS on-state current (IT(RMS)) of 8A at a tab temperature of 102°C, and a non-repetitive peak on-state current (ITSM) of 65A. The gate trigger current (IGT) is typically low, with maximum values ranging from 10mA to 25mA depending on the quadrant. The holding current (IH) is also low, with a maximum of 20mA.
This device features high blocking voltage capability and low holding current, which contributes to reduced EMI at commutation. Its planar passivated construction ensures voltage ruggedness and reliability. The BT137-600E is suitable for applications such as general-purpose motor control and general-purpose switching.
The triac is housed in a TO-220AB package, designed for heatsink mounting and through-hole mounting. The maximum operating temperature is 125°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak off-state voltage (VDRM) for the BT137-600E is 600V.
The RMS on-state current (IT(RMS)) for the BT137-600E is 8A.
The BT137-600E is supplied in a TO-220AB package.
The maximum operating temperature for the BT137-600E is 125°C.
The RoHS status is RoHS3 Compliant.