TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,220 pcs
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2220 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | 2026-06-03 08:15:17 | |
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407 pcs
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407 pcs | On Request | 1 | On Request | On Request | 1706+ | On Request | On Request |
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The Toshiba TC58DVM92A5TAI0 is a 512-Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). It is organized as 528 bytes × 32 pages × 4096 blocks, utilizing a serial interface for address and data input/output. The device supports modes such as Read, Reset, Auto Page Program, and Auto Block Erase.
Key electrical characteristics include a power supply voltage range of 2.7V to 3.6V, an access time of 25µs from cell array to register, and a serial read cycle time of 40ns. Program and erase operations are automated, with typical times of 300µs per page for programming and 2.5ms per block for erasing. Operating currents are up to 20mA during read, program, and erase operations, with a standby current of 50µA maximum.
This NAND E2PROM is packaged in a TSOPI48-P-1220-0.50, weighing approximately 0.53g. It operates within a temperature range of -40°C to 85°C, making it suitable for various electronic systems requiring high-density non-volatile memory data storage, such as solid-state file storage and image file memory for cameras.
The TC58DVM92A5TAI0 has a memory size of 512Mbit.
The device is organized as 528 Bytes x 32 Pages x 4096 Blocks.
The operating voltage range is 2.7V to 3.6V.
The access time from cell array to register is 25µs maximum.
The typical auto page program time is 300µs per page.
The typical auto block erase time is 2.5ms per block.
The operating temperature range is -40°C to 85°C.