SZESD8351XV2T1G The On Semiconductor SZESD8351XV2T1G is a TVS Diode designed for high-speed data line protection. It offers low capacitance and low clamping voltage.
Mfr Part #:

SZESD8351XV2T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SZESD8351XV2T1G is a TVS Diode designed for high-speed data line protection. It offers low capacitance and low clamping voltage.
Total Stock: 13,020 pcs
$ Price Range: $0.55

SZESD8351XV2T1G Available from 1 distributor

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SZESD8351XV2T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Applications
Automotive Grade
Breakdown Voltage (Typical/Maximum @ IT = 1 mA, I/O Pin to GND)
Capacitance
Capacitance (Maximum @ I/O to GND)
Capacitance @ Frequency
Current
Halogen Free
IEC 61000-4-2 Air (ESD)
IEC 61000-4-2 Contact ESD
ISO 10605 ESD
Lead Solder Temperature
Mounting Type
Operating Temperature
Operating Temperature (TJ)
Pb-Free
Peak Pulse Current (Maximum @ 8/20 µs @ TA = 25 °C)
Power Line Protection
Reverse Leakage Current
Storage Temperature
Supplier Device Package
Supplier Package
Type
Unidirectional Channels
Voltage
Working Peak Voltage

SZESD8351XV2T1G Description

Short technical summary and product information.

The SZESD8351XV2T1G from On Semiconductor is an ESD protection diode specifically designed for high-speed data lines. It features ultra-low capacitance and a low ESD clamping voltage, making it an ideal solution for protecting sensitive high-speed data interfaces.

 

This device offers a working peak voltage of 3.3V and a clamping voltage of 11.2V at a peak pulse current of 5A (8/20µs). It meets stringent IEC 61000-4-2 (Level 4) and ISO 10605 ESD standards. The diode operates over a wide temperature range of -55°C to 125°C.

 

Packaged in a compact SOD-523 (SC-79) surface-mount case, the SZESD8351XV2T1G is suitable for space-constrained applications. It is Pb-Free and Halogen Free, complying with RoHS standards. Typical applications include USB 2.0 and eSATA interfaces.

SZESD8351XV2T1G Quick Information

Product Type: TVS Diode
Canonical Name: SZESD8351XV2T1G ESD Protection Diode
Subcategory: ESD Protection Diodes

SZESD8351XV2T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SZESD8351XV2T1G Estimated Pricing

Qty Low High
1+ $0.55 $0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

SZESD8351XV2T1G Features

  • Low capacitance for high-speed data lines.
  • Protects against IEC 61000-4-2 Level 4 ESD.
  • Low clamping voltage minimizes device stress.
  • Automotive qualified and PPAP capable.
  • Compact SOD-523 surface-mount package.

SZESD8351XV2T1G Applications

  • Ideal for USB 2.0 interfaces.
  • Suitable for eSATA data lines.
  • Protects automotive high-speed data.
  • General purpose ESD protection.

SZESD8351XV2T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the working (standoff) voltage of the SZESD8351XV2T1G?

The working peak voltage is 3.3 V (maximum for I/O pin to ground).

What are the breakdown voltage specifications?

The typical breakdown voltage is 7.0 V and the maximum is 7.8 V at 1 mA test current (I/O to GND).

What is the clamping voltage of this TVS diode?

The maximum clamping voltage is 11.2 V.

What is the peak pulse current rating?

The maximum peak pulse current is 5.0 A for an 8/20 µs waveform at 25°C.

What package options are available?

The device is offered in SC-79 and SOD-523 surface mount packages.

What is the capacitance of the SZESD8351XV2T1G?

The maximum capacitance is 0.55 pF (I/O to GND), with a typical value of 0.4 pF at 1 MHz.

What ESD protection levels does it provide?

It provides ±15 kV contact and air discharge per IEC 61000-4-2, and ±30 kV contact per ISO 10605 (330 pF / 2 kΩ).

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