SUP40N25-60
Vishay
The Vishay Dale SUP40N25-60 is an N-Channel MOSFET designed for industrial applications. It offers a 250V drain-source voltage and a continuous drain current of 40A.
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6,046 pcs
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6046 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Vishay Siliconix SUP90N03-03-E3 is an N-Channel Power MOSFET with a drain-source voltage rating of 30V. It is designed using TrenchFET technology, offering low on-resistance values of 0.0029 Ω at VGS = 10V and 0.0033 Ω at VGS = 4.5V. This MOSFET is tested for R g and UIS, and is compliant with RoHS Directive 2011/65/EU.
This component is suitable for applications such as OR-ing, server power, and DC/DC converters. It comes in a TO-220AB package, which is a through-hole mounting type. The operating junction and storage temperature range is from -55°C to 175°C.
Key electrical characteristics include a continuous drain current of up to 90A (TC = 25°C) and a maximum power dissipation of 250W (TC = 25°C). The typical gate charge is 82 nC. Thermal resistance from junction to case is a low 0.5°C/W (typical).
The maximum drain-source breakdown voltage is 30 volts.
It is housed in a TO-220AB through-hole package.
The component operates within a junction temperature range of -55°C to 175°C.
The typical drain-source on-resistance is 0.0029 ohms at VGS = 10V.
It supports a continuous drain current of 90 amperes at case temperatures up to 70°C.
The typical total gate charge is 82 nanocoulombs.