SUD50N03-10
Vishay
The Vishay Siliconix SUD50N03-10 is an N-Channel MOSFET with a 30V breakdown voltage and 15A continuous drain current. It is designed for surface mount applications.
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411 pcs
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411 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
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The Vishay SUM110P04-04L-E3 is a P-Channel TrenchFET Power MOSFET with a drain-source voltage rating of -40V. It offers a low on-state resistance of 0.0042 Ω at VGS = -10V and 0.0062 Ω at VGS = -4.5V, making it suitable for efficient power switching.
This MOSFET operates at temperatures up to 175°C and has a continuous drain current of -110A. It is housed in a TO-263 package, designed for surface mounting.
Key electrical characteristics include a gate threshold voltage between -1V and -3V, and a gate-body leakage of ±100 nA. The device also features a low junction-to-case thermal resistance of 0.4 °C/W, contributing to its thermal performance.
Applications for this MOSFET include power management circuits, load switching, and general-purpose power electronics where a robust P-Channel device is required.
The drain-source breakdown voltage is -40V.
The typical on-state resistance is 0.0062 Ω at VGS = -4.5V.
The maximum continuous drain current is -110A.
The operating junction and storage temperature range is -55 to 175 °C.
The SUM110P04-04L-E3 is supplied in a TO-263 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.