| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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25,050 pcs
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25050 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
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| SVHC Present |
The SUD50N025-06P from VBsemi is a high-performance N-Channel MOSFET utilizing Trench technology. It is housed in a TO252 package and is engineered for demanding high-current applications. This MOSFET boasts a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 100A.
Key electrical characteristics include a low on-resistance (RDS(ON)) of 3mΩ at VGS = 4.5V and an even lower 2mΩ at VGS = 10V. This low resistance minimizes power loss during operation, contributing to enhanced efficiency in power conversion and load management tasks.
The Trench technology employed in its manufacturing significantly reduces switching and conduction losses, providing superior power management capabilities. The SUD50N025-06P is well-suited for applications requiring efficient, high-current control, such as power management, load switching, and battery management systems.
Its robust design and electrical performance make it a suitable component for DC-DC converters, industrial power distribution, electric vehicles, and consumer electronics where efficient power handling is critical.
30V.
100A.
2mΩ at VGS=10V and 3mΩ at VGS=4.5V.
1.7V typical.
±20V.
TO252 surface-mount package.
Trench.
