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STW6NB100

The STW6NB100 is an N-channel power MOSFET from STMicroelectronics designed for high voltage applications. It offers a 1000V drain-source voltage and a continuous current rating of 5.4A.

✓ Total Stock: 60 pcs

STW6NB100 Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	60 pcs On Request	60 pcs	On Request	1	On Request	On Request	15+	On Request	On Request

STW6NB100 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	STMicroelectronics
Storage Temperature	-65 to 150 ℃

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STW6NB100 Description

Short technical summary and product information.

The STW6NB100 is an N-channel power MOSFET manufactured by STMicroelectronics. It utilizes advanced high-voltage technology to provide outstanding performance characteristics. This MOSFET features a drain-source voltage of 1000V and a continuous drain current of 5.4A at 25°C, decreasing to 3.4A at 100°C. The typical on-resistance is 2.3 Ohms.

Designed with a patent-pending strip layout and proprietary edge termination structure, the STW6NB100 offers exceptional avalanche and dv/dt capabilities, along with minimized gate charge and very low intrinsic capacitances. It is packaged in a TO-247 through-hole package, suitable for various power applications.

Absolute maximum ratings include a gate-source voltage of ±30V and a maximum operating junction temperature of 150°C. Storage temperature ranges from -65°C to 150°C. The device is 100% avalanche tested, ensuring reliability in demanding conditions.

STW6NB100 Quick Information

Product Type: Power MOSFET

Series: STW6N

Canonical Name: STW6NB100 N-Channel Power MOSFET

Subcategory: N-Channel

STW6NB100 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

STW6NB100 Features

1000V drain-source voltage rating.
5.4A continuous drain current.
2.3 Ohm typical on-resistance.
TO-247 through-hole package.
High dv/dt and avalanche capabilities.

STW6NB100 Applications

Suitable for high-voltage power supplies.
Used in power factor correction circuits.
Applicable in industrial motor control.
Ideal for switching power applications.

STW6NB100 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the STW6NB100?

The maximum drain-source voltage is 1000V.

What is the continuous drain current of the STW6NB100 at 25°C?

The continuous drain current at 25°C is 5.4A.

What is the typical on-resistance of the STW6NB100?

The typical on-resistance is 2.3 Ohms.

What package type is the STW6NB100 supplied in?

The STW6NB100 is supplied in a TO-247 package.

What is the maximum operating junction temperature for this MOSFET?

The maximum operating junction temperature is 150°C.

STW6NB100 Alternate Parts

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2SK1117

Toshiba

The Toshiba 2SK1117 is an N-Channel MOSFET Transistor designed for switch mode power supplies and general purpose applications. It features a 600V Drain-Source Voltage and 6.0A Drain Current.

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