| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13 pcs
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13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Storage Temperature |
The Toshiba 2SK1117 is an N-Channel MOSFET Transistor suitable for switch mode power supplies and general purpose applications. It offers a high Drain-Source Voltage rating of 600V and a continuous Drain Current of 6.0A.
Key electrical characteristics include a Static Drain-Source On-Resistance of 1.25 Ω and a Gate-Source Voltage range of ±20V. The device is designed to operate within a maximum junction temperature of 150℃, with a storage temperature range of -65℃ to 150℃.
Thermal performance is supported by a Junction to Case thermal resistance of 1.25℃/W. This MOSFET is a reliable component for power conversion and general electronic circuit designs requiring robust switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage is 600 V.
The maximum continuous Drain Current is 6.0 A.
The Static Drain-Source On-Resistance is 1.25 Ω.
The maximum operating junction temperature is 150 ℃.
The storage temperature range is -65 to 150 ℃.
The Gate-Source Voltage is ±20 V.