| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,500 pcs
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8500 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| SVHC Present |
The STU30N15 from Samhop is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for high performance and reliability. It features a super high dense cell design for low R DS(ON), with a typical on-resistance of 62mΩ at VGS=10V. The device can handle a maximum drain-source voltage (V DSS) of 150V and a continuous drain current (ID) of 22A.
This MOSFET is available in both TO-252 (D-PAK) and TO-251 (I-PAK) packages, making it suitable for various surface-mount applications. Its rugged and reliable construction ensures consistent performance in demanding environments. The logic-level gate drive capability simplifies integration with low-voltage control circuitry.
Key electrical characteristics include a maximum drain-source voltage of 150V and a continuous drain current of 22A. The typical on-resistance is 62mΩ at a gate-source voltage of 10V. The STU30N15 is designed for applications requiring efficient power switching and low conduction losses.
The maximum drain-source voltage (V DSS) for the STU30N15 is 150V.
The STU30N15 has a continuous drain current (ID) of 22A.
The typical on-resistance (R DS(ON)) for the STU30N15 is 62mΩ at a gate-source voltage of 10V.
The STU30N15 is available in TO-252 (D-PAK) and TO-251 (I-PAK) packages.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
