KA431AZ-TA
On Semiconductor
The KA431AZ-TA is a voltage reference integrated circuit from On Semiconductor. It features a typical reference voltage of 2.495V and is housed in a TO-92-3 package.
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The STP3NB80 is an N-Channel Power MOSFET designed using STMicroelectronics' advanced MESH OVERLAY process. It features an 800V drain-source voltage and a typical on-resistance of 4.6 Ohms at 10V gate-source voltage and 1.3A drain current. This MOSFET is characterized by extremely high dv/dt capability, 100% avalanche tested, and very low intrinsic capacitances.
With a continuous drain current rating of 2.6A at 25°C, the STP3NB80 is suitable for high current, high-speed switching applications. It is available in both TO-220 and TO-220FP packages, offering flexibility for different mounting requirements.
Key applications include uninterruptible power supplies (UPS), DC-DC converters, and DC-AC converters for telecom, industrial, and consumer environments. The device's design prioritizes outstanding performance, low RDS(on) per area, and exceptional switching characteristics.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the STP3NB80 is 800V.
The typical static drain-source on-resistance (RDS(on)) for the STP3NB80 is 4.6 Ohms when tested at VGS = 10V and ID = 1.3A.
The continuous drain current rating for the STP3NB80 is 2.6A at a case temperature of 25°C.
The STP3NB80 is available in TO-220 and TO-220FP packages.
The maximum operating junction temperature (Tj) for the STP3NB80 is 150°C.
