IRF3710PBF

The Infineon IRF3710PBF is an N-channel HEXFET® Power MOSFET utilizing advanced processing techniques for extremely low on-resistance per silicon area. This device offers a Drain-to-Source Breakdown Voltage of 100V and a continuous Drain Current of 57A at 25°C. Its typical On-Resistance is 23mΩ, making it highly efficient for various applications.

The MOSFET is housed in a universally preferred TO-220AB package, suitable for commercial-industrial applications with power dissipation up to 50 watts. The TO-220 package offers low thermal resistance and cost-effectiveness. Key electrical characteristics include a Gate-to-Source Voltage range of ±20V, a maximum Power Dissipation of 200W at 25°C, and a Junction-to-Case Thermal Resistance of 0.75°C/W.

Designed for reliability, the IRF3710PBF is fully avalanche rated and operates within a temperature range of -55°C to +175°C. It also features fast switching speeds and a dynamic dv/dt rating of 5.8V/ns. The integrated body diode provides a continuous source current of 57A and a pulsed source current of 230A, with a forward voltage of 1.2V.

This MOSFET is suitable for a wide variety of applications requiring efficient power switching and management. Its robust design and performance characteristics make it a reliable choice for designers in demanding environments.