STH270N8F7-2
STMicroelectronics
STH270N8F7-2 is an N-Channel Power MOSFET from STMicroelectronics. It features 80V drain-source voltage, 180A continuous current, and low 2.1mOhm on-resistance.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STH270N8F7-6 is an N-Channel Power MOSFET manufactured by STMicroelectronics. It is designed for high-efficiency power switching applications, offering a drain-source voltage rating of 80V and a continuous drain current of 180A (at Tc). The device features a low typical on-resistance of 2.1mOhm (max) at 90A and 10V gate drive, minimizing conduction losses.
Key electrical characteristics include a maximum gate threshold voltage of 4V at 250µA, a gate charge of 193nC at 10V, and an input capacitance of 13600pF at 50V Vds. The device is capable of dissipating up to 315W at Tc, with an operating junction temperature range from -55°C to +175°C.
The MOSFET is housed in a H2PAK surface-mount package, suitable for automated assembly and space-constrained designs. Its high current capability and low Rds(on) make it ideal for applications such as DC-DC converters, motor drives, and power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
H2PAK.
-55°C to +175°C.
2.1mOhm at 90A and 10V Vgs.
193nC at 10V.
180A at case temperature Tc.
13600pF at 50V Vds.