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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Emitter Voltage | |
| Continuous Collector Current | |
| Current | |
| Factory Pack Quantity | |
| Failure Rate | |
| Gate Charge | |
| Gate-Emitter Voltage | |
| Height | |
| Input Type | |
| Length | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Technology | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| Width |
The STGB10NC60HDT4 is a silicon N-channel IGBT designed for high-efficiency switching applications. It offers a maximum collector-emitter voltage of 600V and a continuous collector current rating of 20A, with a power dissipation capability of 65W. The device features a low Vce(on) of 2.5V at 15V gate-emitter voltage and 5A collector current, contributing to reduced conduction losses.
Switching performance is characterized by a turn-on delay of 14.2ns and switching energies of 31.8µJ (on) and 95µJ (off) under test conditions of 390V, 5A, 10Ω, and 15V. The gate charge is 19.2nC, and the reverse recovery time is 22ns. The device is housed in a D2PAK-3 (TO-263) surface-mount package, with dimensions 10.4mm x 9.35mm x 4.6mm, suitable for automated assembly.
The STGB10NC60HDT4 is part of the STGB10NC60HD series and operates over a junction temperature range of -55°C to 150°C. It is supplied in tape and reel packaging with a factory pack quantity of 1000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
D2PAK-3 (TO-263).
-55°C to 150°C (junction).
20A.
±20V.
31.8µJ (on) and 95µJ (off).
22ns.