| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,219 pcs
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6219 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
545 pcs
|
545 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
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The Vishay SQJB40EP-T1_GE3 is a high-performance Dual N-Channel MOSFET belonging to the TrenchFET® series, suitable for demanding automotive applications. It features a 60V drain-to-source breakdown voltage and can handle a continuous drain current of 30A at 25°C.
Key electrical characteristics include a low on-resistance of 13mOhm at 10A and 10V, a maximum gate charge of 35nC at 10V, and an input capacitance of 1700pF at 25V. The gate threshold voltage is a maximum of 3.5V at 250µA.
This MOSFET is rated for a maximum power dissipation of 48W (Tc) and operates within a wide temperature range of -55°C to 175°C (TJ). It is housed in a surface-mount PowerPAK® SO-8 package, supplied on tape and reel.
The series is qualified to AEC-Q101 standards, indicating its suitability for automotive environments. The MOSFET technology used is Metal Oxide Semiconductor Field-Effect Transistor.
The maximum drain-source voltage is 60V.
It is available in a PowerPAK SO-8 package.
The operating junction temperature range is -55°C to 175°C.
The maximum gate threshold voltage is 3.5V at 250µA.
The maximum gate charge is 35nC at 10V.
The maximum input capacitance is 1700pF at 25V.
The maximum power dissipation is 48W at case temperature.