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452,000 pcs
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452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SQ9945AEY is a dual N-channel power MOSFET built using TrenchFET technology, offering low thermal resistance in an SO-8 package. This AEC-Q101 qualified component is rated for 60V drain-source voltage and ±20V gate-source voltage.
Key electrical characteristics include a maximum drain-source on-state resistance of 0.08Ω at VGS = 10V and ID = 3.7A, with a typical forward transconductance of 11S. The device can handle a continuous drain current of up to 3.7A at 25°C and 3.2A at 70°C. It operates reliably across a wide temperature range from -55°C to +175°C.
Designed for automotive applications, the SQ9945AEY meets AEC-Q101 reliability standards. Its SO-8 package is suitable for surface mounting, making it a versatile choice for various electronic designs requiring robust power switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60 V.
The maximum drain-source on-state resistance is 0.08 Ω at VGS = 10 V and ID = 3.7 A.
The operating junction and storage temperature range is -55 °C to +175 °C.
The SQ9945AEY is available in an SO-8 package.
Yes, the SQ9945AEY is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.