| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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39,000 pcs
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39000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The SQ2319ADS-T1_BE3 is a P-Channel enhancement mode MOSFET from Vishay Dale. It features a drain-source breakdown voltage of -40 V (minimum) and a maximum gate-source threshold voltage of -2.5 V. The gate-source leakage current is limited to ±100 nA. This device is designed for low-voltage power switching applications.
With a continuous drain current rating of 4.6 A, it is suitable for load switching, power management, and battery protection circuits. The MOSFET is housed in a compact SOT23-3 surface-mount package, enabling space-efficient PCB designs.
Typical applications include DC-DC converters, portable electronics, and low-side switching where P-Channel topology is preferred. The device's electrical characteristics ensure reliable operation within its specified limits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -40 V.
The maximum gate-source threshold voltage is -2.5 V.
The maximum gate-source leakage current is ±100 nA.