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SMMBT5551LT1G The SMMBT5551LT1G is a single NPN bipolar junction transistor from onsemi. It offers 160 V collector-emitter voltage, 600 mA continuous collector current, and comes in a SOT-23 surface-mount package.
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SMMBT5551LT1G

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SMMBT5551LT1G is a single NPN bipolar junction transistor from onsemi. It offers 160 V collector-emitter voltage, 600 mA continuous collector current, and comes in a SOT-23 surface-mount package.
✓ Total Stock: 230,528 pcs
$ Price Range: $0.51

SMMBT5551LT1G Available from 8 distributors

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✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SMMBT5551LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SMMBT5551LT1G Description

Short technical summary and product information.

The SMMBT5551LT1G is a single NPN bipolar junction transistor (BJT) from onsemi. It is designed for general-purpose switching and amplification and is supplied in the compact SOT-23 surface-mount package.

 

Key electrical ratings include a maximum collector-emitter voltage of 160 Vdc, a maximum collector-base voltage of 180 Vdc, and a maximum emitter-base voltage of 6 Vdc. The device supports a continuous collector current of 600 mAdc, making it suitable for moderate-power circuits.

 

Robust ESD protection is built in with an HBM rating greater than 8000 V and a machine model rating greater than 400 V. The SOT-23 package enables space-efficient PCB layouts and is well suited for automated assembly.

SMMBT5551LT1G Quick Information

Product Type: Bipolar (BJT) Transistor, Single
Canonical Name: NPN Bipolar Junction Transistor (BJT), Single
Subcategory: BJT - Single

SMMBT5551LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMMBT5551LT1G Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMBT5551LT1G Features

  • 160 V collector-emitter voltage rating.
  • 600 mAdc continuous collector current.
  • >8000 V human body model ESD.
  • Compact SOT-23 surface-mount package.
  • NPN bipolar junction transistor.

SMMBT5551LT1G Applications

  • Switching and amplification in control circuits.
  • Signal driving in industrial electronics.
  • Interfacing logic to higher-voltage loads.
  • Suitable for low-power power management.

SMMBT5551LT1G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SMMBT5551LT1G?

The maximum collector-emitter voltage is 160 Vdc.

What is the continuous collector current rating?

The continuous collector current is 600 mAdc.

What are the collector-base and emitter-base voltage ratings?

The maximum collector-base voltage is 180 Vdc, and the maximum emitter-base voltage is 6 Vdc.

What is the ESD rating of this transistor?

The HBM ESD rating is greater than 8000 V, and the machine model rating is greater than 400 V.

SMMBT5551LT1G Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
SMMBT5551LT3G
SMMBT5551LT3G
On Semiconductor
The On Semiconductor SMMBT5551LT3G is an NPN silicon transistor designed for high voltage applications. It offers a 160V collector-emitter voltage and 600mA continuous current, housed in a compact SOT-23-3 package.
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