SMMBT5551LT3G The On Semiconductor SMMBT5551LT3G is an NPN silicon transistor designed for high voltage applications. It offers a 160V collector-emitter voltage and 600mA continuous current, housed in a compact SOT-23-3 package.
Mfr Part #:

SMMBT5551LT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SMMBT5551LT3G is an NPN silicon transistor designed for high voltage applications. It offers a 160V collector-emitter voltage and 600mA continuous current, housed in a compact SOT-23-3 package.
✓ Total Stock: 7,360 pcs
$ Price Range: $0.51

SMMBT5551LT3G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,360 pcs
7360 pcs On Request 1 On Request On Request On Request On Request On Request

SMMBT5551LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SMMBT5551LT3G Description

Short technical summary and product information.

The SMMBT5551LT3G from On Semiconductor is a high voltage NPN silicon transistor. It is rated for a maximum collector-emitter voltage of 160V and a continuous collector current of 600mA. The device features a Vce saturation of 200mV at 5mA/50mA and a minimum DC current gain (hFE) of 80 at 10mA/5V.

 

This transistor is designed for surface mount applications and comes in a TO-236-3, SC-59, SOT-23-3 package. It operates across a wide temperature range from -55°C to 150°C (TJ). The total device dissipation is rated at 225 mW on an FR-5 board at 25°C. It also exhibits high resistance to electrostatic discharge, withstanding over 8000V (HBM) and over 400V (MM).

 

The SMMBT5551LT3G is Pb-Free and Halogen Free, complying with RoHS standards. Its robust design and specifications make it suitable for various electronic circuits requiring reliable high-voltage switching or amplification.

SMMBT5551LT3G Quick Information

Product Type: NPN Silicon Transistor
Canonical Name: SMMBT5551LT3G NPN Silicon High Voltage Transistor
Subcategory: Single

SMMBT5551LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

SMMBT5551LT3G Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMBT5551LT3G Features

  • High voltage NPN silicon transistor.
  • 160V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • Surface mount SOT-23-3 package.
  • Wide -55°C to 150°C operating temperature.

SMMBT5551LT3G Applications

  • Used in general-purpose switching circuits.
  • Suitable for amplifier stages in medium voltage designs.
  • Ideal for low-power driver applications.
  • Can be used in consumer electronics products.
  • Applicable in industrial control modules.

SMMBT5551LT3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SMMBT5551LT3G?

160 Vdc.

What is the maximum collector current?

600 mAdc.

What is the package type?

SOT-23-3 (TO-236-3, SC-59).

What is the operating temperature range?

-55°C to 150°C (junction).

What is the minimum DC current gain?

80 at 10mA, 5V.

What is the ESD rating?

>8000 V HBM and >400 V MM.

Is the device lead-free and halogen-free?

Yes, it is Pb-Free and Halogen Free/BFR Free as verified by the datasheet.

Home
Account

Categories