SIZ342JT-T1-GE3
Vishay
The Vishay SIZ342JT-T1-GE3 is an N-Channel MOSFET designed for power applications. It offers a 30V drain-source breakdown voltage and a continuous drain current of 30A.
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The SIZ342JT-T1-GE3 from Vishay / Siliconix is an N-Channel MOSFET belonging to the SIZ series. This component is built with TrenchFET technology, offering efficient power handling. It boasts a drain-source breakdown voltage (Vds) of 30V and a continuous drain current (Id) of 30A. The on-resistance (Rds On) is a low 8.4 mOhms at typical conditions, contributing to reduced power loss.
This MOSFET operates with a gate-source threshold voltage (Vgs th) of 1.2V and supports a gate-source voltage (Vgs) range of -16V to 20V. The typical gate charge (Qg) is 20 nC. It is designed for surface-mount (SMD/SMT) applications and comes in a PowerPAIR 3x3-8 package. The operating temperature range is from -55°C to +150°C, with a power dissipation of 16.7W.
Key electrical characteristics include a minimum forward transconductance (Gfs) of 37S, and typical switching times such as fall time of 10ns, rise time of 50ns, turn-on delay of 15ns, and turn-off delay of 16ns. The component is RoHS3 compliant and has an MSL rating of 1.
30 V.
30 A.
8.4 mOhms.
20 nC.
-55°C to +150°C.
PowerPAIR-3x3-8.