| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Failure Rate | |
| Gate Charge | |
| Mounting Style | |
| Number of Channels | |
| Package / Case | |
| Power Dissipation | |
| Technology |
The Vishay SIZ342JT-T1-GE3 is a high-performance N-Channel MOSFET from the SIZ series, utilizing TrenchFET technology. It features a drain-source breakdown voltage of 30V and a continuous drain current capability of 30A. The MOSFET exhibits a low on-resistance of 8.4 mOhms at the drain-source, with a gate threshold voltage of 1.2V.
This component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 16.7W. It is configured as a dual-channel device in an enhancement mode. The MOSFET is supplied in a PowerPAIR-3x3-8 package, suitable for surface-mount (SMD/SMT) applications, and is typically supplied on a reel.
Key electrical characteristics include a gate charge of 20 nC, a minimum forward transconductance of 37 S, and switching times including a fall time of 10 ns, rise time of 50 ns, typical turn-on delay of 15 ns, and typical turn-off delay of 16 ns. The Vishay SIZ342JT-T1-GE3 is a robust solution for various power management and switching applications.
The drain-source breakdown voltage is 30 V.
The continuous drain current is 30 A.
The typical on-resistance is 8.4 mOhms.
The gate threshold voltage is 1.2 V.
The operating temperature range is -55 C to +150 C.
This MOSFET is in a PowerPAIR-3x3-8 package.
This MOSFET is surface-mount (SMD/SMT).