| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,389 pcs
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5389 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
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| FET Feature | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
This Vishay Dale SI7960DP-T1-GE3 is a dual N-channel MOSFET belonging to the Transistors - FETs, MOSFETs - Arrays category. It features a 60V drain-to-source voltage and a continuous current rating of 6.2A. The MOSFET is designed with a logic level gate and has an Rds On of 21mOhm at 9.7A and 10V.
The device is housed in a PowerPAK® SO-8 Dual package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The MOSFET's gate charge is a maximum of 75nC at 10V, and its gate source threshold voltage is 3V at 250µA. It has a power dissipation of 1.4W.
This component is suitable for various electronic applications requiring efficient switching and power management. Its dual N-channel configuration and surface mount package make it versatile for integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 60V.
The continuous current rating is 6.2A.
The operating temperature range is -55°C to 150°C (TJ).
It is in a PowerPAK® SO-8 Dual package.
It is a surface mount device.