SI7960DP-T1-E3 MOSFET 2N-CH 60V 6.2A PPAK SO-8
Mfr Part #:

SI7960DP-T1-E3

Mfr Name: Vishay
Vishay
MOSFET 2N-CH 60V 6.2A PPAK SO-8
Stock on Request

SI7960DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI7960DP-T1-E3 Description

Short technical summary and product information.
MOSFET 2N-CH 60V 6.2A PPAK SO-8

SI7960DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7960DP-T1-E3 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
SI7960DP-T1-GE3
SI7960DP-T1-GE3
Vishay
The Vishay Dale SI7960DP-T1-GE3 is a dual N-channel MOSFET designed for surface mount applications. It offers a 60V drain-source voltage and 6.2A continuous current.
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